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APTM120DU29TG
Dual Common Source MOSFET Power Module
D1 Q1 D2 Q2
VDSS = 1200V RDSon = 290m typ @ Tj = 25C ID = 34A @ Tc = 25C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies
G1
G2
S1 S NTC1
S2
NTC2
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 1200 34 25 136 30 348 780 22 50 3000 Unit V A V m W A mJ
G2 S2
D2
D1
S
D2
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM120DU29TG- Rev1
July, 2006
APTM120DU29TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25C T j = 125C
Typ
VGS = 10V, ID = 17A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
290 3
Max 350 1500 348 5 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 34A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 34A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5
Min
Typ 10.3 1.54 0.26 374 48 240 20 15 160 45 1980 1371 3131 1714
Max
Unit nF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 34A IS = - 34A ; VR = 600V diS/dt = 200A/s 1291 58
Max 34 25 1.3 10
Unit A V V/ns ns C
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 34A di/dt 700A/s VR VDSS Tj 150C
July, 2006
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APTM120DU29TG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.16 150 125 100 4.7 160
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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July, 2006
APTM120DU29TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse 0.9
0 0.00001
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 100
VGS =15, 10 & 8V
Transfert Characteristics 160 140 ID, Drain Current (A)
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
80 60 40 20 0 0 5 10 15 20
7V 6.5V
120 100 80 60 40 20 0
TJ=25C T J=125C TJ=-55C
6V
5.5V 5V
25
30
0
1
2
3
4
5
6
7
8
9
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 17A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 30 20 10 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
20
40
60
80
25
50
75
100
125
150
July, 2006
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM120DU29TG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 12 10 8 6 4 2 0 0 80 160 240 320 400 480 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=17A
1000
100s
100
limited by RDS on 1ms
10
Single pulse TJ =150C TC=25C 1
10ms
1 1200 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage I D=34A TJ=25C
V DS=240V VDS=600V V DS =960V
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APTM120DU29TG- Rev1
APTM120DU29TG
Delay Times vs Current 180 td(on) and td(off) (ns) 150 60
V DS=800V RG =2.5 T J=125C L=100H
Rise and Fall times vs Current 80
V DS =800V RG =2.5 T J=125C L=100H
t d(off)
tf
90 60 30 0 10
tr and tf (ns)
120
40 tr 20
td(on)
0 20 30 40 50 60 70 10 20 I D, Drain Current (A) Switching Energy vs Current 30 40 50 ID, Drain Current (A) 60 70
Switching Energy vs Gate Resistance 7
VDS=800V ID=34A TJ=125C L=100H
6
Switching Energy (mJ)
5 4 3 2 1 0 10
Switching Energy (mJ)
VDS=800V RG=2.5 TJ=125C L=100H
Eon
6 5 4 3 2 1
Eoff
Eoff
Eon Eoff
20
30 40 50 60 I D, Drain Current (A)
70
0.0
2.5
5.0
7.5 10.0 12.5 15.0 17.5
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
Operating Frequency vs Drain Current 200 175
ZCS
IDR, Reverse Drain Current (A)
225
1000
Frequency (kHz)
150 125 100 75 50 25 0 8 12 16 20 24 28 ID, Drain Current (A) 32
VDS=800V D=50% RG=2.5 T J=125C T C=75C ZVS
100
T J=150C T J=25C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM120DU29TG- Rev1

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